BCR 114F E6327

Teknik Özellikler

Yayın Yılı

2003

Yüzey Montaj

YES

Resistor Emitter Base R2

10 k Ω

Transistor Type

NPN - Pre-Biased

Power Dissipationmax Abs

0.25W

Current Collector Cutoff Max

100nA ICBO

Currentcollector Ic Max

100mA

Vce Saturation Max Ib Ic

300mV @ 500μA, 10mA

Resistor Base R1

4.7 k Ω

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kılıf / Paket

SOT-723

Voltage Collector Emitter Breakdown Max

50V

Dc Current Gain Hfe Min Ic Vce

30 @ 5mA 5V

Frequency Transition

160MHz

Montaj Tipi

Surface Mount

Power Max

250mW

Polaritychannel Type

NPN

Parça Durumu

Obsolete

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Transistor Element Material

SILICON

RoHS Durumu

RoHS Compliant

REACH Uyumluluk Kodu

unknown