BCR 112L3 E6327

Teknik Özellikler

Resistor Emitter Base R2

4.7 k Ω

Yüzey Montaj

YES

Yayın Yılı

2003

Resistor Base R1

4.7 k Ω

Vce Saturation Max Ib Ic

300mV @ 500μA, 10mA

Currentcollector Ic Max

100mA

Current Collector Cutoff Max

100nA ICBO

Temel Parça No

BCR112

Power Dissipationmax Abs

0.25W

Transistor Type

NPN - Pre-Biased

Power Max

250mW

Polaritychannel Type

NPN

Frequency Transition

140MHz

Montaj Tipi

Surface Mount

Voltage Collector Emitter Breakdown Max

50V

Dc Current Gain Hfe Min Ic Vce

20 @ 5mA 5V

Kılıf / Paket

SC-101, SOT-883

Nem Hassasiyeti (MSL)

1 (Unlimited)

REACH Uyumluluk Kodu

unknown

Number Of Elements

1

Transistor Element Material

SILICON

RoHS Durumu

ROHS3 Compliant

Ambalaj

Tape & Reel (TR)

Parça Durumu

Discontinued