K4B2G0846D-HCH9

Teknik Özellikler

Organization

256MX8

Terminal Pozisyonu

BOTTOM

Memory Ic Type

DDR DRAM

Io Type

COMMON

Temperature Grade

OTHER

Package Style

GRID ARRAY, FINE PITCH

Memory Density

2147483648 bit

Terminal Adımı

0.8 mm

Number Of Terminals

78

Standby Currentmax

0.012 A

Sequential Burst Length

8

Refresh Cycles

8192

Clock Frequencymax Fclk

667 MHz

Access Timemax

0.255 ns

Supply Currentmax

0.135 mA

Memory Width

8

Package Code

FBGA

Qualification Status

Not Qualified

Supply Voltagenom Vsup

1.5 V

Rohs Code

Yes

Number Of Words Code

256000000

Operating Temperaturemax

85 °C

REACH Uyumluluk Kodu

compliant

Part Life Cycle Code

Obsolete

Number Of Words

268435456 words

Package Equivalence Code

BGA78,9X13,32

Terminal Formu

BALL

Üretici Parça No

K4B2G0846D-HCH9

Interleaved Burst Length

8

Package Shape

RECTANGULAR

Package Body Material

PLASTIC/EPOXY

Package Description

FBGA, BGA78,9X13,32

Jesd30 Code

R-PBGA-B78

Technology

CMOS

Ihs Manufacturer

SAMSUNG SEMICONDUCTOR INC

Power Supplies

1.5 V

Yüzey Montaj

YES

Risk Rank

5.79

Output Characteristics

3-STATE