Fiyat için teklif alın
Adet ve teslim süresine göre fiyatlandırılır.
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Power Supplies
- 2.5/3.3 V
- Supply Voltagemax
- 3.6 V
- Tip
- DCD
- Standby Currentmax
- 0.045 A
- Operating Mode
- SYNCHRONOUS
- Operating Temperaturemax
- 85 °C
- Package Style
- FLATPACK, LOW PROFILE
- Additional Feature
- PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY
- Io Type
- COMMON
- Minimum Operating Temperature
- - 40 C
- Access Timemax
- 7.5 ns
- Terminal Formu
- GULL WING
- Ürün Tipi
- SRAM
- Kurşunsuz Kodu
- Yes
- Maximum Clock Frequency
- 150 MHz
- Tepe Reflow Sıcaklığı (°C)
- 260
- JESD-609 Kodu
- e3
- Package Code
- LQFP
- Risk Rank
- 5.6
- Package Equivalence Code
- QFP100,.63X.87
- Fabrika Tedarik Süresi
- 8 Weeks
- Parallelserial
- PARALLEL
- Package Description
- LQFP, QFP100,.63X.87
- Clock Frequencymax Fclk
- 150 MHz
- Ambalaj
- Tray
- Package Shape
- RECTANGULAR
- Üretici Parça No
- GS880E18CGT-150I
- Fonksiyon Sayısı
- 1
- Memory Size
- 9 Mbit
- Operating Temperaturemin
- -40 °C
- Pin Sayısı
- 100
- RoHS
- Details
- Terminal Pozisyonu
- QUAD
- Organization
- 512 k x 18
- Output Characteristics
- 3-STATE
- Tradename
- SyncBurst
- Ihs Manufacturer
- GSI TECHNOLOGY
- Moisture Sensitivity Levels
- 3
- Part Life Cycle Code
- Active
- Kılıf / Paket
- TQFP-100
İlgili Ürünler
Microchip Technology
11AA010-I/MS
Memory
Microchip Technology
11AA010-I/P
Memory
Microchip Technology
11AA010-I/SN
Memory
Microchip Technology
11AA010-I/TO
Memory
Microchip Technology
11AA010T-I/MNY
Memory
Microchip Technology
11AA010T-I/MS
Memory
Microchip Technology
11AA010T-I/SN
Memory
Microchip Technology
11AA010T-I/TT
Memory