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Support
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Specifications
- Collector Emitter Voltage Vceo
- 300V
- Current Collector Cutoff Max
- 500nA (ICBO)
- Terminal Kaplaması
- Matte Tin (Sn)
- Kurşunsuz Kodu
- yes
- Genişlik
- 1.6mm
- Yayın Yılı
- 2009
- Dc Current Gain Hfe Min Ic Vce
- 40 @ 30mA, 10V
- Vce Saturation Max Ib Ic
- 500mV @ 2mA, 20mA
- Transistor Type
- NPN
- Max Breakdown Voltage
- 300V
- Collectoremitter Saturation Voltage
- 500mV
- Tepe Reflow Sıcaklığı (°C)
- 260
- Weight
- 4.535924g
- Akım Değeri
- 500mA
- Transistor Application
- SWITCHING
- Emitter Base Voltage Vebo
- 6V
- Max Frequency
- 50MHz
- Uzunluk
- 3.04mm
- ECCN Kodu
- EAR99
- Gerilim
- 300V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Currentcollector Ic Max
- 500 mA
- Terminal Sayısı
- 3
- Frekans
- 50MHz
- Transistor Element Material
- SILICON
- Collector Base Voltage Vcbo
- 300V
- Çalışma Sıcaklığı
- 150°C (TJ)
- Max Power Dissipation
- 350mW
- JESD-609 Kodu
- e3
- Akım
- 5A
- Number Of Elements
- 1
- Polarity
- NPN
- Terminal Formu
- GULL WING
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Tedarikçi Cihaz Paketi
- SOT-23
- Maks. Çalışma Sıcaklığı
- 150°C
- Min. Çalışma Sıcaklığı
- -55°C
- Max Collector Current
- 500mA
- Polaritychannel Type
- NPN
- Hfemin
- 40
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