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12A02MH-TL-E

ON Semiconductor

12A02MH-TL-E

Single BJT Transistors

RoHS: Compliant

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Specifications

Collector Base Voltage Vcbo
15V
Montaj Tipi
Surface Mount
Pin Sayısı
3
Nem Hassasiyeti (MSL)
1 (Unlimited)
Uzunluk
2mm
Collector Emitter Voltage Vceo
12V
Current Collector Cutoff Max
100nA ICBO
Collectoremitter Saturation Voltage
-240mV
Vce Saturation Max Ib Ic
240mV @ 20mA, 400mA
Element Configuration
Single
Collectoremitter Breakdown Voltage
12V
Max Collector Current
1A
Yayın Yılı
2011
Number Of Elements
1
RoHS Durumu
ROHS3 Compliant
Kurşunsuz
Lead Free
Ambalaj
Tape & Reel (TR)
Power Dissipation
600mW
Kurşunsuz Kodu
yes
Genişlik
1.6mm
Dc Current Gain Hfe Min Ic Vce
300 @ 10mA 2V
JESD-609 Kodu
e6
Terminal Kaplaması
Tin/Bismuth (Sn/Bi)
Max Breakdown Voltage
12V
ECCN Kodu
EAR99
Frekans
450MHz
Parça Durumu
Active
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Fabrika Tedarik Süresi
21 Weeks
Çalışma Sıcaklığı
150°C TJ
Emitter Base Voltage Vebo
5V
Kılıf / Paket
3-SMD, Flat Lead
Transistor Type
PNP
Yükseklik
850μm
Max Power Dissipation
600mW
Pin Sayısı
3

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