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BUJD203A,127

WeEn Semiconductors

BUJD203A,127

Single BJT Transistors

RoHS: Compliant

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Compliant

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Specifications

Çalışma Sıcaklığı
150°C TJ
Number Of Elements
1
Transistor Element Material
SILICON
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
425V
Nem Hassasiyeti (MSL)
1 (Unlimited)
Currentcollector Ic Max
4A
Configuration
SINGLE WITH BUILT-IN DIODE
Yüzey Montaj
NO
Power Max
80W
Dc Current Gain Hfe Min Ic Vce
11 @ 2A 5V
Current Collector Cutoff Max
100μA
Parça Durumu
Active
Transistor Application
SWITCHING
Temel Parça No
BUJD203A
Montaj Tipi
Through Hole
Case Connection
COLLECTOR
Reference Standard
IEC-60134
Polaritychannel Type
NPN
Kılıf / Paket
TO-220-3
Terminal Pozisyonu
SINGLE
Jedec95 Code
TO-220AB
ECCN Kodu
EAR99
RoHS Durumu
RoHS Compliant
Terminal Sayısı
3
Jesd30 Code
R-PSFM-T3
Ambalaj
Tube
Vce Saturation Max Ib Ic
1V @ 600mA, 3A

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