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BUJ100,412

WeEn Semiconductors

BUJ100,412

Single BJT Transistors

RoHS: Compliant

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Specifications

Jesd30 Code
O-PBCY-T3
Terminal Sayısı
3
RoHS Durumu
RoHS Compliant
ECCN Kodu
EAR99
Vce Saturation Max Ib Ic
1V @ 150mA, 750mA
Ambalaj
Bulk
Polaritychannel Type
NPN
Reference Standard
IEC-134
Terminal Pozisyonu
BOTTOM
Kılıf / Paket
TO-226-3, TO-92-3 (TO-226AA)
Current Collector Cutoff Max
100μA
Dc Current Gain Hfe Min Ic Vce
9 @ 750mA 5V
Power Max
2W
Yüzey Montaj
NO
Montaj Tipi
Through Hole
Temel Parça No
BUJ100
Transistor Application
SWITCHING
Parça Durumu
Active
Voltage Collector Emitter Breakdown Max
400V
Transistor Type
NPN
Transistor Element Material
SILICON
Çalışma Sıcaklığı
150°C TJ
Number Of Elements
1
Configuration
SINGLE
Currentcollector Ic Max
1A
Nem Hassasiyeti (MSL)
1 (Unlimited)

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