SIHF30N60E-E3

Specifications

Qg Gate Charge

85 nC

Pd Power Dissipation

37 W

Fabrika Paket Adedi

50

Kılıf / Paket

TO-220FP-3

Typical Turnoff Delay Time

63 ns

Genişlik

4.7 mm

Yükseklik

15.49 mm

Number Of Channels

1 Channel

Vgs Gatesource Voltage

- 30 V, + 30 V

Rds On Drainsource Resistance

125 mOhms

Vds Drainsource Breakdown Voltage

600 V

Uzunluk

10.41 mm

Seri

E

Minimum Operating Temperature

- 55 C

Üretici Parça No

SIHF30N60E-E3

Id Continuous Drain Current

29 A

Channel Mode

Enhancement

Birim Ağırlık

0.068784 oz

Typical Turnon Delay Time

19 ns

Transistor Polarity

N-Channel

Vgs Th Gatesource Threshold Voltage

2.8 V

Rise Time

32 ns

RoHS

Details

Montaj Stili

Through Hole

Maks. Çalışma Sıcaklığı

+ 150 C

Ürün Tipi

MOSFET

Configuration

Single

Ambalaj

Tube

Technology

Si