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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Qualification Status
- Not Qualified
- Yüzey Montaj
- NO
- Drain Currentmax Abs Id
- 0.2A
- Vgs Max
- ±20V
- RoHS Durumu
- ROHS3 Compliant
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Montaj Tipi
- Through Hole
- Temel Parça No
- 2N7000
- Current Continuous Drain Id25
- 200mA Ta
- Vgsth Max Id
- 3V @ 1mA
- Jesd30 Code
- O-PBCY-T3
- Terminal Pozisyonu
- BOTTOM
- Rds On Max Id Vgs
- 5 Ω @ 500mA, 10V
- Kurşunsuz Kodu
- yes
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Number Of Elements
- 1
- Parça Durumu
- Active
- Power Dissipation Max
- 400mW Ta
- Yayın Yılı
- 2011
- Transistor Element Material
- SILICON
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Fet Type
- N-Channel
- Ambalaj
- Tape & Reel (TR)
- Feedback Capmax Crss
- 5 pF
- Ds Breakdown Voltagemin
- 60V
- Drainsource On Resistancemax
- 5Ohm
- Lifecycle Status
- ACTIVE (Last Updated: 3 days ago)
- Terminal Sayısı
- 3
- Drain To Source Voltage Vdss
- 60V
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- Input Capacitance Ciss Max Vds
- 50pF @ 25V
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Fabrika Tedarik Süresi
- 11 Weeks
- Transistor Application
- SWITCHING
- Operating Mode
- ENHANCEMENT MODE
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