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UnitedSiC

UJ3N120070K3S

JFETs Transistors

RoHS: Compliant

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Specifications

Temel Ürün No
UJ3N120070
Kılıf / Paket
TO-247-3
Paket
Tube
Montaj Tipi
Through Hole
Tedarikçi Cihaz Paketi
TO-247-3
Resistance Rdson
90 mOhms
Current Drain Id Max
33.5 A
Input Capacitance Ciss Max Vds
985pF @ 100V
Fabrika Paket Adedi
30
Transistor Polarity
N-Channel
Pd Power Dissipation
254 W
Maks. Çalışma Sıcaklığı
+ 175 C
Fet Type
N-Channel
Minimum Operating Temperature
- 55 C
RoHS
Details
Ürün Durumu
Active
Configuration
Single
Power Max
254 W
Id Continuous Drain Current
33.5 A
Seri
UJ3N
Technology
SiC
Ambalaj
Tube
Tradename
Sic JFET
Montaj Stili
Through Hole
Ürün Tipi
JFETs
Birim Ağırlık
0.387214 oz
Drain To Source Voltage Vdss
1200 V
Çalışma Sıcaklığı
-55°C ~ 175°C (TJ)
Qualification
AEC-Q101
Vgs Gatesource Breakdown Voltage
20 V
Vds Drainsource Breakdown Voltage
1200 V
Rds On Drainsource Resistance
70 mOhms
Voltage Breakdown Vbrgss
1200 V

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