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Technical team support
Specifications
- Current Drain Id Max
- 10mA
- Ambalaj
- Bag
- Number Of Elements
- 1
- Transistor Polarity
- P-Channel
- Fet Type
- P-Channel
- Voltage Breakdown Vbrgss
- 30V
- REACH Uyumluluk Kodu
- unknown
- Maks. Çalışma Sıcaklığı
- 200°C
- Maks. Çalışma Sıcaklığı
- + 200 C
- Package Description
- TO-18, 3 PIN
- Package Body Material
- METAL
- Power Max
- 300mW
- Package Style
- CYLINDRICAL
- Üretici Parça No
- 97-3057-10
- Fabrika Paket Adedi
- 1
- Operating Temperaturemax
- 200 °C
- Kılıf / Paket
- TO-206AA, TO-18-3 Metal Can
- Terminal Pozisyonu
- BOTTOM
- Configuration
- Single
- Case Connection
- GATE
- HTS Kodu
- 8541.21.00.95
- Vgs Gatesource Breakdown Voltage
- 30 V
- Pd Power Dissipation
- 300 mW
- Yayın Yılı
- 2002
- Part Package Code
- BCY
- Gate To Source Voltage Vgs
- 30V
- Montaj
- Through Hole
- Fet Technology
- JUNCTION
- Ihs Manufacturer
- MICROSEMI CORP
- Fabrika Tedarik Süresi
- 32 Weeks
- Current Drain Idss Vds Vgs0
- 2mA @ 5V
- Pin Sayısı
- 3
- Number Of Terminals
- 3
- Transistor Element Material
- SILICON
- Operating Mode
- DEPLETION MODE
- Voltage Cutoff Vgs Off Id
- 750mV @ 1A
- Input Capacitance Ciss Max Vds
- 10pF @ 5V
- JESD-609 Kodu
- e0
- Terminal Formu
- WIRE
- Tedarikçi Cihaz Paketi
- TO-18 (TO-206AA)
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