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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Voltage Breakdown Vbrgss
- 1200 V
- Qualification
- AEC-Q101
- Vgs Gatesource Breakdown Voltage
- 20 V
- Vds Drainsource Breakdown Voltage
- 1200 V
- Rds On Drainsource Resistance
- 35 mOhms
- Çalışma Sıcaklığı
- -55°C ~ 175°C (TJ)
- Ürün Tipi
- JFETs
- Birim Ağırlık
- 0.480890 oz
- Drain To Source Voltage Vdss
- 1200 V
- Montaj Stili
- Through Hole
- Seri
- UJ3N
- Ambalaj
- Tube
- Technology
- SiC
- Tradename
- Sic JFET
- Id Continuous Drain Current
- 63 A
- Configuration
- Single
- Power Max
- 429 W
- Minimum Operating Temperature
- - 55 C
- Fet Type
- N-Channel
- RoHS
- Details
- Ürün Durumu
- Active
- Fabrika Paket Adedi
- 30
- Transistor Polarity
- N-Channel
- Pd Power Dissipation
- 429 W
- Maks. Çalışma Sıcaklığı
- + 175 C
- Current Drain Id Max
- 63 A
- Input Capacitance Ciss Max Vds
- 2145pF @ 100V
- Resistance Rdson
- 45 mOhms
- Tedarikçi Cihaz Paketi
- TO-247-3
- Temel Ürün No
- UJ3N120035
- Kılıf / Paket
- TO-247-3
- Paket
- Tube
- Montaj Tipi
- Through Hole
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