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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Collector Emitter Voltage Vceo
- 50V
- Power Dissipation
- 300mW
- Element Configuration
- Single
- Terminal Sayısı
- 3
- Collectoremitter Saturation Voltage
- 1V
- Dc Current Gain Hfe Min Ic Vce
- 75 @ 1mA 10V
- Pin Sayısı
- 3
- Kurşunsuz Kodu
- no
- Number Of Elements
- 1
- Max Collector Current
- 800mA
- Emitter Base Voltage Vebo
- 6V
- Current Collector Cutoff Max
- 50nA
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- RoHS Durumu
- Non-RoHS Compliant
- Hfemin
- 30
- Parça Durumu
- Active
- Montaj Tipi
- Surface Mount
- Montaj
- Surface Mount
- Max Power Dissipation
- 300mW
- Transistor Type
- NPN
- Collector Base Voltage Vcbo
- 75V
- Transistor Application
- SWITCHING
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Max Junction Temperature Tj
- 200°C
- Ambalaj
- Bulk
- Polaritychannel Type
- NPN
- Transistor Element Material
- SILICON
- Terminal Formu
- NO LEAD
- Fabrika Tedarik Süresi
- 25 Weeks
- Transition Frequency
- 250MHz
- ECCN Kodu
- EAR99
- Çalışma Sıcaklığı
- -65°C~200°C TJ
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- JESD-609 Kodu
- e0
- Collectoremitter Breakdown Voltage
- 50V
- Yükseklik
- 1.42mm
- Vce Saturation Max Ib Ic
- 1V @ 15mA, 500mA
- Yayın Yılı
- 1997
- Genişlik
- 2.667mm
- Qualification Status
- Not Qualified
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