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2N2222AUATXV

TT Electronics/Optek Technology

2N2222AUATXV

Single BJT Transistors

RoHS: Compliant

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Specifications

RoHS Durumu
Non-RoHS Compliant
Nem Hassasiyeti (MSL)
1 (Unlimited)
Parça Durumu
Active
Emitter Base Voltage Vebo
6V
Max Collector Current
800mA
Current Collector Cutoff Max
10nA ICBO
Pin Sayısı
4
Dc Current Gain Hfe Min Ic Vce
75 @ 1mA 10V
Voltage Collector Emitter Breakdown Max
50V
Collector Emitter Voltage Vceo
300mV
Tedarikçi Cihaz Paketi
4-CLCC (5.59x3.81)
Collectoremitter Saturation Voltage
1V
Power Dissipation
500mW
Maks. Çalışma Sıcaklığı
200°C
Kılıf / Paket
4-CLCC
Min. Çalışma Sıcaklığı
-65°C
Uzunluk
5.715mm
Vce Saturation Max Ib Ic
300mV @ 15mA, 150mA
Currentcollector Ic Max
800mA
Collectoremitter Breakdown Voltage
50V
Yükseklik
1.905mm
Yayın Yılı
2007
Genişlik
3.937mm
Fabrika Tedarik Süresi
25 Weeks
Çalışma Sıcaklığı
-65°C~200°C TJ
Max Power Dissipation
500mW
Transistor Type
NPN
Montaj Tipi
Surface Mount
Montaj
Surface Mount
Power Max
500mW
Ambalaj
Bulk
Collector Base Voltage Vcbo
75V

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