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TTC5200(Q)

Toshiba Semiconductor and Storage

TTC5200(Q)

Single BJT Transistors

RoHS: Compliant

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Compliant

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Specifications

Montaj Tipi
Through Hole
RoHS Durumu
RoHS Compliant
Uzunluk
20.5mm
Vce Saturation Max Ib Ic
3V @ 800mA, 8A
Ambalaj
Tray
Power Dissipation
150W
Montaj
Through Hole
Nem Hassasiyeti (MSL)
1 (Unlimited)
Yayın Yılı
2009
Collectoremitter Saturation Voltage
3V
Radyasyon Dayanımı
No
Gain Bandwidth Product
30MHz
Transistor Type
NPN
Element Configuration
Single
Max Power Dissipation
150W
Max Collector Current
15A
Dc Current Gain Hfe Min Ic Vce
80 @ 1A 5V
Collectoremitter Breakdown Voltage
230V
Emitter Base Voltage Vebo
5V
Collector Base Voltage Vcbo
230V
Genişlik
5.2mm
Pin Sayısı
3
Yükseklik
26mm
Collector Emitter Voltage Vceo
230V
Number Of Elements
1
Kurşunsuz
Lead Free
Çalışma Sıcaklığı
150°C TJ
Frekans
30MHz
Kılıf / Paket
TO-3PL
Hfemin
80
Current Collector Cutoff Max
5μA ICBO
Fabrika Tedarik Süresi
12 Weeks
Parça Durumu
Active

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