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TTC008(Q)

Toshiba Semiconductor and Storage

TTC008(Q)

Single BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$1.10
  • 10+ pcs$1.03
  • 100+ pcs$0.98
  • 500+ pcs$0.92

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Same-day dispatch from stock

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RoHS

Compliant

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Specifications

Max Power Dissipation
1.1W
Dc Current Gain Hfe Min Ic Vce
80 @ 1mA 5V
Radyasyon Dayanımı
No
Yayın Yılı
2010
Fabrika Tedarik Süresi
18 Weeks
RoHS Durumu
RoHS Compliant
Kurşunsuz
Lead Free
Ambalaj
Bulk
Transistor Type
NPN
Montaj
Through Hole
Parça Durumu
Active
Collector Base Voltage Vcbo
600V
Çalışma Sıcaklığı
150°C TJ
Collector Emitter Voltage Vceo
1V
Nem Hassasiyeti (MSL)
1 (Unlimited)
Collectoremitter Breakdown Voltage
285V
Vce Saturation Max Ib Ic
1V @ 62.5mA, 500mA
Number Of Elements
1
Pin Sayısı
3
Montaj Tipi
Through Hole
Emitter Base Voltage Vebo
7V
Power Dissipation
1.1W
Kılıf / Paket
TO-251-3 Short Leads, IPak, TO-251AA
Current Collector Cutoff Max
10μA ICBO
Max Collector Current
1.5A

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