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Toshiba Semiconductor and Storage

TPH4R50ANH1,LQ

Single MOSFETs Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$1.69
  • 10+ pcs$1.60
  • 100+ pcs$1.50
  • 500+ pcs$1.42

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RoHS

Compliant

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Specifications

Seri
U-MOSVIII-H
Çalışma Sıcaklığı
150°C
Current Continuous Drain Id25
92A (Tc)
Rds On Drainsource Resistance
4.5 mOhms
Fet Type
N-Channel
Ambalaj
MouseReel
Ürün Durumu
Active
Fabrika Paket Adedi
5000
Qg Gate Charge
58 nC
Rds On Max Id Vgs
4.5mOhm @ 46A, 10V
Maks. Çalışma Sıcaklığı
+ 150 C
RoHS
Details
Transistor Polarity
N-Channel
Drive Voltage Max Rds On Min Rds On
10V
Pd Power Dissipation
170 W
Gate Charge Qg Max Vgs
58 nC @ 10 V
Input Capacitance Ciss Max Vds
5200 pF @ 50 V
Kılıf / Paket
8-PowerTDFN
Vgs Gatesource Voltage
- 20 V, + 20 V
Power Dissipation Max
800mW (Ta)
Tedarikçi Cihaz Paketi
8-SOP Advance (5x5.75)
Montaj Tipi
Surface Mount
Vgsth Max Id
4V @ 1mA
Vgs Th Gatesource Threshold Voltage
4 V
Drain To Source Voltage Vdss
100 V
Id Continuous Drain Current
92 A
Ürün Tipi
MOSFET
Number Of Channels
1 Channel
Channel Mode
Enhancement
Rise Time
9.6 ns
Vgs Max
±20V
Montaj Stili
SMD/SMT
Vds Drainsource Breakdown Voltage
100 V

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