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TMBT3904,LM

Toshiba Semiconductor and Storage

TMBT3904,LM

Single BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.05
  • 10+ pcs$0.05
  • 100+ pcs$0.04
  • 500+ pcs$0.04

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RoHS

Compliant

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Specifications

Yayın Yılı
2015
Fabrika Tedarik Süresi
12 Weeks
Ambalaj
Tape & Reel (TR)
RoHS Durumu
RoHS Compliant
Montaj Tipi
Surface Mount
Frequency Transition
300MHz
Max Power Dissipation
320mW
Dc Current Gain Hfe Min Ic Vce
100 @ 10mA 1V
Current Collector Cutoff Max
100nA ICBO
Power Max
320mW
Vce Saturation Max Ib Ic
300mV @ 5mA, 50mA
Max Collector Current
150mA
Collectoremitter Breakdown Voltage
50V
Nem Hassasiyeti (MSL)
1 (Unlimited)
Parça Durumu
Active
Kılıf / Paket
TO-236-3, SC-59, SOT-23-3
Max Breakdown Voltage
50V
Transistor Type
NPN
Montaj
Surface Mount
Collector Emitter Voltage Vceo
300mV
Çalışma Sıcaklığı
150°C TJ

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