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TK12J60U(F)

Toshiba Semiconductor and Storage

TK12J60U(F)

Single MOSFETs Transistors

In StockRoHS: Compliant

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RoHS

Compliant

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Specifications

Pin Sayısı
3
Current Continuous Drain Id25
12A Ta
Radyasyon Dayanımı
No
Vgs Max
±30V
Gate To Source Voltage Vgs
30V
Parça Durumu
Active
Fet Type
N-Channel
Continuous Drain Current Id
12A
Rise Time
30ns
Çalışma Sıcaklığı
150°C TJ
Power Dissipation
144W
Drive Voltage Max Rds On Min Rds On
10V
Montaj Tipi
Through Hole
Genişlik
4.8mm
Vgsth Max Id
5V @ 1mA
Turn On Delay Time
60 ns
Fall Time Typ
8 ns
Uzunluk
40.5mm
Nem Hassasiyeti (MSL)
1 (Unlimited)
Drain To Source Breakdown Voltage
600V
Ambalaj
Bulk
Threshold Voltage
3V
Rds On Max Id Vgs
400m Ω @ 6A, 10V
Reach Svhc
No SVHC
Kılıf / Paket
TO-3P-3, SC-65-3
Input Capacitance Ciss Max Vds
720pF @ 10V
Seri
DTMOSII
Element Configuration
Single
Yükseklik
19mm
Gate Charge Qg Max Vgs
14nC @ 10V
Turn Off Delay Time
75 ns
RoHS Durumu
RoHS Compliant
Yayın Yılı
2008
Montaj
Through Hole
Number Of Elements
1
Power Dissipation Max
144W Tc

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