Volume pricing
- 1+ pcs$1.22
- 10+ pcs$1.15
- 100+ pcs$1.08
- 500+ pcs$1.02
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Montaj Stili
- SMD/SMT
- Channel Mode
- Enhancement
- Montaj Tipi
- Surface Mount
- Çalışma Sıcaklığı
- 175°C
- Transistor Polarity
- P-Channel
- Drain To Source Voltage Vdss
- 60 V
- Qualification
- AEC-Q101
- Rds On Max Id Vgs
- 104mOhm @ 4A, 10V
- Power Dissipation Max
- 27W (Tc)
- Vds Drainsource Breakdown Voltage
- 60 V
- Input Capacitance Ciss Max Vds
- 890 pF @ 10 V
- Typical Turnon Delay Time
- 14 ns
- Temel Ürün No
- TJ8S06
- Kılıf / Paket
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Rds On Drainsource Resistance
- 104 mOhms
- Gate Charge Qg Max Vgs
- 19 nC @ 10 V
- Fet Type
- P-Channel
- Pd Power Dissipation
- 27 W
- Fabrika Paket Adedi
- 2000
- Rise Time
- 6 ns
- Vgs Gatesource Voltage
- - 20 V, + 10 V
- Drive Voltage Max Rds On Min Rds On
- 6V, 10V
- Ürün Durumu
- Active
- Maks. Çalışma Sıcaklığı
- + 175 C
- RoHS
- Details
- Id Continuous Drain Current
- 8 A
- Vgsth Max Id
- 3V @ 1mA
- Qg Gate Charge
- 19 nC
- Number Of Channels
- 1 Channel
- Typical Turnoff Delay Time
- 140 ns
- Vgs Th Gatesource Threshold Voltage
- 3 V
- Transistor Type
- 1 P-Channel
- Seri
- U-MOSVI
- Ambalaj
- Cut Tape
- Tedarikçi Cihaz Paketi
- DPAK+
- Current Continuous Drain Id25
- 8A (Ta)
- Birim Ağırlık
- 0.012699 oz
- Vgs Max
- +10V, -20V
- Part Aliases
- TJ8S06M3L,LXHQ(O
- Ürün Tipi
- MOSFET
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