TJ60S04M3L(T6L1,NQ

Specifications

Gate Charge Qg Max Vgs

125nC @ 10V

Fet Type

P-Channel

Gate To Source Voltage Vgs

10V

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Input Capacitance Ciss Max Vds

6510pF @ 10V

Reference Standard

AEC-Q101

Power Dissipation Max

90W Tc

Transistor Element Material

SILICON

Pulsed Drain Currentmax Idm

120A

Rds On Max Id Vgs

6.3m Ω @ 30A, 10V

Drain To Source Voltage Vdss

40V

Terminal Pozisyonu

SINGLE

Drainsource On Resistancemax

0.0094Ohm

Terminal Formu

GULL WING

Avalanche Energy Rating Eas

146 mJ

Montaj Tipi

Surface Mount

Çalışma Sıcaklığı

175°C TJ

Operating Mode

ENHANCEMENT MODE

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

60A

RoHS Durumu

RoHS Compliant

Yayın Yılı

2009

Radyasyon Dayanımı

No

Fall Time Typ

240 ns

Parça Durumu

Active

Vgs Max

+10V, -20V

Ds Breakdown Voltagemin

40V

Seri

U-MOSVI

Ambalaj

Tape & Reel (TR)

Current Continuous Drain Id25

60A Ta

Jesd30 Code

R-XSSO-G2

Number Of Elements

1

Vgsth Max Id

3V @ 1mA

Terminal Sayısı

2

Montaj

Surface Mount

Pin Sayısı

3

Drive Voltage Max Rds On Min Rds On

6V 10V

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

DRAIN

Rise Time

96ns