SSM3J328R,LF

Specifications

Drain To Source Breakdown Voltage

-20V

Turn On Delay Time

32 ns

Vgs Max

±8V

Element Configuration

Single

Number Of Elements

1

Power Dissipation Max

1W Ta

Kılıf / Paket

SOT-23-3 Flat Leads

Gate Charge Qg Max Vgs

12.8nC @ 4.5V

Seri

U-MOSVI

Terminal Sayısı

3

Parça Durumu

Active

Montaj Tipi

Surface Mount

Rds On Max Id Vgs

29.8m Ω @ 3A, 4.5V

Yayın Yılı

2009

Continuous Drain Current Id

6A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Pulsed Drain Currentmax Idm

24A

Input Capacitance Ciss Max Vds

840pF @ 10V

Fabrika Tedarik Süresi

16 Weeks

Current Continuous Drain Id25

6A Ta

Drive Voltage Max Rds On Min Rds On

1.5V 4.5V

Power Dissipation

2W

Transistor Element Material

SILICON

Terminal Pozisyonu

DUAL

Fet Type

P-Channel

Vgsth Max Id

1V @ 1mA

Operating Mode

ENHANCEMENT MODE

Turn Off Delay Time

107 ns

Montaj

Surface Mount

Radyasyon Dayanımı

No

RoHS Durumu

RoHS Compliant

Drain Currentmax Abs Id

6A

Çalışma Sıcaklığı

150°C TJ

Drainsource On Resistancemax

0.0298Ohm

Ambalaj

Digi-Reel®

Number Of Channels

1

Pin Sayısı

3

Drain To Source Voltage Vdss

20V

Gate To Source Voltage Vgs

8V