Volume pricing
- 1+ pcs$0.43
- 10+ pcs$0.40
- 100+ pcs$0.38
- 500+ pcs$0.36
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Dc Current Gain Hfe Min Ic Vce
- 65 @ 100mA 1V
- Yayın Yılı
- 2009
- Min. Çalışma Sıcaklığı
- -55°C
- Max Power Dissipation
- 200mW
- Maks. Çalışma Sıcaklığı
- 150°C
- Max Collector Current
- 800mA
- Collector Emitter Voltage Vceo
- 250mV
- Montaj Tipi
- Surface Mount
- Montaj
- Surface Mount
- Transistor Type
- PNP - Pre-Biased
- Resistor Base R1
- 2.2 k Ω
- Polaritychannel Type
- PNP
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Ambalaj
- Tape & Reel (TR)
- Element Configuration
- Single
- Additional Feature
- BUILT IN BIAS RESISTANCE RATIO IS 1
- Parça Durumu
- Active
- Fabrika Tedarik Süresi
- 12 Weeks
- RoHS Durumu
- RoHS Compliant
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Number Of Elements
- 1
- Transistor Application
- SWITCHING
- Frequency Transition
- 200MHz
- Terminal Sayısı
- 3
- Terminal Pozisyonu
- DUAL
- Resistor Emitter Base R2
- 2.2 k Ω
- Collectoremitter Breakdown Voltage
- 50V
- Current Collector Cutoff Max
- 500nA
- Pin Sayısı
- 3
- Terminal Formu
- GULL WING
- Transition Frequency
- 200MHz
- Vce Saturation Max Ib Ic
- 250mV @ 1mA, 50mA
- Radyasyon Dayanımı
- No
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