Request a quote for pricing
Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Power Max
- 1 W
- Currentcollector Ic Max
- 800 mA
- Paket
- Bulk
- Resistor Base R1
- 1 kOhms
- Kılıf / Paket
- 3-SSIP
- Ürün Durumu
- Active
- Voltage Collector Emitter Breakdown Max
- 80 V
- Dc Current Gain Hfe Min Ic Vce
- 4000 @ 300mA, 2V
- Montaj Tipi
- Through Hole
- Transistor Type
- NPN - Pre-Biased
- Vce Saturation Max Ib Ic
- 1.2V @ 1mA, 500mA
- Current Collector Cutoff Max
- 1μA (ICBO)
Related Products
Panjit
2SC164S_R2_00001
Pre-Biased BJT Transistors
Aptina
2SC3402-AC
Pre-Biased BJT Transistors
IMP
4245.08.00
Pre-Biased BJT Transistors
IMP
4245.08.01
Pre-Biased BJT Transistors
Nexperia
934055050115
Pre-Biased BJT Transistors
WEIDMÜLLER
9500640000 PCF 7.50/04/180 3.5SN OR BX
Pre-Biased BJT Transistors
Diodes Incorporated
ADA123JUQ-7
Pre-Biased BJT Transistors
Diodes Incorporated
ADC113TUQ-7
Pre-Biased BJT Transistors