Request a quote for pricing
Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Power Max
- 1 W
- Currentcollector Ic Max
- 800 mA
- Paket
- Bulk
- Resistor Base R1
- 1 kOhms
- Kılıf / Paket
- 3-SSIP
- Ürün Durumu
- Active
- Voltage Collector Emitter Breakdown Max
- 80 V
- Dc Current Gain Hfe Min Ic Vce
- 4000 @ 300mA, 2V
- Montaj Tipi
- Through Hole
- Transistor Type
- NPN - Pre-Biased
- Vce Saturation Max Ib Ic
- 1.2V @ 1mA, 500mA
- Current Collector Cutoff Max
- 1μA (ICBO)
Related Products
AMI Semiconductor
DTC124XM3T5G
Pre-Biased BJT Transistors
AMI Semiconductor
DTA115EET1G
Pre-Biased BJT Transistors
AMI Semiconductor
DTA115TM3T5G
Pre-Biased BJT Transistors
AMI Semiconductor
DTA123JM3T5G
Pre-Biased BJT Transistors
AMI Semiconductor
DTA124EM3T5G
Pre-Biased BJT Transistors
AMI Semiconductor
DTA143ZM3T5G
Pre-Biased BJT Transistors
AMI Semiconductor
DTA144WET1G
Pre-Biased BJT Transistors
AMI Semiconductor
DTC123TM3T5G
Pre-Biased BJT Transistors