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RN2404,LF

Toshiba Semiconductor and Storage

RN2404,LF

Pre-Biased BJT Transistors

RoHS: Compliant

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Specifications

Fabrika Tedarik Süresi
14 Weeks
Power Max
200mW
Parça Durumu
Not For New Designs
Nem Hassasiyeti (MSL)
1 (Unlimited)
RoHS Durumu
RoHS Compliant
Currentcollector Ic Max
100mA
Kılıf / Paket
TO-236-3, SC-59, SOT-23-3
Vce Saturation Max Ib Ic
300mV @ 250μA, 5mA
Voltage Collector Emitter Breakdown Max
50V
Ambalaj
Tape & Reel (TR)
Montaj Tipi
Surface Mount
Resistor Emitter Base R2
47 k Ω
Current Collector Cutoff Max
500nA
Resistor Base R1
47 k Ω
Transistor Type
PNP - Pre-Biased
Frequency Transition
200MHz
Yayın Yılı
2014
Dc Current Gain Hfe Min Ic Vce
80 @ 10mA 5V

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