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RN2110ACT(TPL3)

Toshiba Semiconductor and Storage

RN2110ACT(TPL3)

Pre-Biased BJT Transistors

RoHS: Compliant

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Compliant

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Specifications

Dc Current Gain Hfe Min Ic Vce
120 @ 1mA 5V
RoHS Durumu
RoHS Compliant
Transistor Type
PNP - Pre-Biased
Vce Saturation Max Ib Ic
150mV @ 250μA, 5mA
Fabrika Tedarik Süresi
12 Weeks
Current Collector Cutoff Max
100nA ICBO
Collector Emitter Voltage Vceo
150mV
Collectoremitter Breakdown Voltage
50V
Yayın Yılı
2014
Max Breakdown Voltage
50V
Montaj
Surface Mount
Max Collector Current
80mA
Nem Hassasiyeti (MSL)
1 (Unlimited)
Power Max
100mW
Polaritychannel Type
PNP
Montaj Tipi
Surface Mount
Parça Durumu
Active
Resistor Base R1
4.7 k Ω
Transistor Element Material
SILICON
Number Of Elements
1
Kılıf / Paket
SC-101, SOT-883
Ambalaj
Tape & Reel (TR)
Max Power Dissipation
100mW

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