Toshiba Semiconductor and Storage
RN2107MFV,L3XHF(CT
Pre-Biased BJT Transistors
In StockRoHS: Compliant
Volume pricing
- 1+ pcs$0.22
- 10+ pcs$0.20
- 100+ pcs$0.19
- 500+ pcs$0.18
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Current Collector Cutoff Max
- 500nA
- Transistor Polarity
- PNP
- Configuration
- Single
- Continuous Collector Current
- 100 mA
- Dc Current Gain Hfe Min Ic Vce
- 80 @ 10mA, 5V
- Dc Collectorbase Gain Hfe Min
- 80 at - 10 mA, - 5 V
- Currentcollector Ic Max
- 100 mA
- Resistor Emitter Base R2
- 47 kOhms
- Transistor Type
- PNP - Pre-Biased
- Collector Emitter Voltage Vceo Max
- 50 V
- Kılıf / Paket
- SOT-723
- Ürün Durumu
- Active
- Ambalaj
- MouseReel
- Ürün Tipi
- BJTs - Bipolar Transistors - Pre-Biased
- Power Max
- 150 mW
- Resistor Base R1
- 10 kOhms
- Montaj Tipi
- Surface Mount
- Qualification
- AEC-Q200
- Fabrika Paket Adedi
- 8000
- Typical Input Resistor
- 10 kOhms
- Tedarikçi Cihaz Paketi
- VESM
- Voltage Collector Emitter Breakdown Max
- 50 V
- RoHS
- Details
- Vce Saturation Max Ib Ic
- 300mV @ 500μA, 5mA
- Pd Power Dissipation
- 150 mW
- Emitter Base Voltage Vebo
- 6 V
- Montaj Stili
- SMD/SMT
- Part Aliases
- RN2107MFV,L3XHF(CB
- Maks. Çalışma Sıcaklığı
- + 150 C
- Typical Resistor Ratio
- 0.213
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