Toshiba Semiconductor and Storage
RN2106MFV,L3XHF(CT
Pre-Biased BJT Transistors
In StockRoHS: Compliant
Volume pricing
- 1+ pcs$0.21
- 10+ pcs$0.20
- 100+ pcs$0.19
- 500+ pcs$0.18
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Resistor Emitter Base R2
- 47 kOhms
- Transistor Type
- PNP - Pre-Biased
- Dc Current Gain Hfe Min Ic Vce
- 80 @ 10mA, 5V
- Maximum Operating Frequency
- 250 MHz
- Dc Collectorbase Gain Hfe Min
- 80 at - 10 mA, - 5 V
- Currentcollector Ic Max
- 100 mA
- Continuous Collector Current
- 100 mA
- Configuration
- Single
- Transistor Polarity
- PNP
- Current Collector Cutoff Max
- 500nA
- Frequency Transition
- 250 MHz
- Resistor Base R1
- 4.7 kOhms
- Montaj Tipi
- Surface Mount
- Power Max
- 150 mW
- Ürün Durumu
- Active
- Kılıf / Paket
- SOT-723
- Collector Emitter Voltage Vceo Max
- 50 V
- Tedarikçi Cihaz Paketi
- VESM
- Voltage Collector Emitter Breakdown Max
- 50 V
- Vce Saturation Max Ib Ic
- 300mV @ 500μA, 5mA
- Typical Input Resistor
- 4.7 kOhms
- Typical Resistor Ratio
- 0.1
- Maks. Çalışma Sıcaklığı
- + 150 C
- Pd Power Dissipation
- 150 mW
- Montaj Stili
- SMD/SMT
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