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RN2103(T5L,F,T)

Toshiba Semiconductor and Storage

RN2103(T5L,F,T)

Pre-Biased BJT Transistors

RoHS: Compliant

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Compliant

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Specifications

Current Collector Cutoff Max
500nA
Collector Emitter Voltage Vceo
300mV
Frequency Transition
200MHz
Max Breakdown Voltage
50V
Montaj
Surface Mount
Collectoremitter Breakdown Voltage
50V
Yayın Yılı
2014
Dc Current Gain Hfe Min Ic Vce
70 @ 10mA 5V
Resistor Emitter Base R2
22 k Ω
RoHS Durumu
RoHS Compliant
Transistor Type
PNP - Pre-Biased
Vce Saturation Max Ib Ic
300mV @ 250μA, 5mA
Kılıf / Paket
SC-75, SOT-416
Ambalaj
Tape & Reel (TR)
Max Power Dissipation
100mW
Nem Hassasiyeti (MSL)
1 (Unlimited)
Power Max
100mW
Max Collector Current
100mA
Resistor Base R1
22 k Ω
Parça Durumu
Active
Montaj Tipi
Surface Mount

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