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RN2102ACT(TPL3)

Toshiba Semiconductor and Storage

RN2102ACT(TPL3)

Pre-Biased BJT Transistors

In StockRoHS: Compliant

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Specifications

Resistor Emitter Base R2
10 k Ω
Fabrika Tedarik Süresi
12 Weeks
RoHS Durumu
RoHS Compliant
Transistor Type
PNP - Pre-Biased
Vce Saturation Max Ib Ic
150mV @ 250μA, 5mA
Dc Current Gain Hfe Min Ic Vce
50 @ 10mA 5V
Max Breakdown Voltage
50V
Montaj
Surface Mount
Collectoremitter Breakdown Voltage
50V
Yayın Yılı
2014
Current Collector Cutoff Max
500nA
Collector Emitter Voltage Vceo
150mV
Resistor Base R1
10 k Ω
Parça Durumu
Active
Polaritychannel Type
PNP
Montaj Tipi
Surface Mount
Nem Hassasiyeti (MSL)
1 (Unlimited)
Power Max
100mW
Max Collector Current
80mA
Ambalaj
Tape & Reel (TR)
Max Power Dissipation
100mW
Transistor Element Material
SILICON
Number Of Elements
1
Kılıf / Paket
SC-101, SOT-883

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