Request a quote for pricing
Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Pin Sayısı
- 3
- Dc Current Gain Hfe Min Ic Vce
- 90 @ 100mA 1V
- Maks. Çalışma Sıcaklığı
- 150°C
- Transistor Type
- NPN - Pre-Biased
- Fabrika Tedarik Süresi
- 12 Weeks
- Temel Parça No
- RN142*
- Resistor Emitter Base R2
- 10 k Ω
- Frequency Transition
- 300MHz
- Collector Emitter Voltage Vceo
- 50V
- Current Collector Cutoff Max
- 500nA
- Min. Çalışma Sıcaklığı
- -55°C
- Collectoremitter Breakdown Voltage
- 50V
- Radyasyon Dayanımı
- No
- Polarity
- NPN
- Montaj Tipi
- Surface Mount
- Resistor Base R1
- 470 Ω
- Parça Durumu
- Active
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Ambalaj
- Tape & Reel (TR)
- Max Power Dissipation
- 200mW
- Vce Saturation Max Ib Ic
- 250mV @ 1mA, 50mA
- RoHS Durumu
- RoHS Compliant
- Yayın Yılı
- 2010
- Montaj
- Surface Mount
- Max Collector Current
- 800mA
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Element Configuration
- Single
Related Products
Panjit
2SC164S_R2_00001
Pre-Biased BJT Transistors
Aptina
2SC3402-AC
Pre-Biased BJT Transistors
Renesas Electronics America Inc
2SD1697-AZ
Pre-Biased BJT Transistors
IMP
4245.08.00
Pre-Biased BJT Transistors
IMP
4245.08.01
Pre-Biased BJT Transistors
Nexperia
934055050115
Pre-Biased BJT Transistors
WEIDMÜLLER
9500640000 PCF 7.50/04/180 3.5SN OR BX
Pre-Biased BJT Transistors
Diodes Incorporated
ADA123JUQ-7
Pre-Biased BJT Transistors