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RN1103MFV,L3F

Toshiba Semiconductor and Storage

RN1103MFV,L3F

Pre-Biased BJT Transistors

RoHS: Compliant

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Compliant

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Specifications

Collector Emitter Voltage Vceo
300mV
Collectoremitter Breakdown Voltage
50V
Montaj Tipi
Surface Mount
Transistor Type
NPN - Pre-Biased
Max Breakdown Voltage
50V
Power Max
150mW
Fabrika Tedarik Süresi
16 Weeks
Parça Durumu
Active
Kılıf / Paket
SOT-723
RoHS Durumu
RoHS Compliant
Nem Hassasiyeti (MSL)
1 (Unlimited)
Vce Saturation Max Ib Ic
300mV @ 500μA, 5mA
Resistor Base R1
22 k Ω
Ambalaj
Tape & Reel (TR)
Max Collector Current
100mA
Dc Current Gain Hfe Min Ic Vce
70 @ 10mA 5V
Yayın Yılı
2011
Resistor Emitter Base R2
22 k Ω
Current Collector Cutoff Max
500nA
Max Power Dissipation
150mW
Montaj
Surface Mount

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