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2SC5359-O(Q)

Toshiba Semiconductor and Storage

2SC5359-O(Q)

Single BJT Transistors

In StockRoHS: Compliant

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Verified sourcing

RoHS

Compliant

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Specifications

Radyasyon Dayanımı
No
Montaj Tipi
Through Hole
Ambalaj
Bulk
Transistor Type
NPN
Parça Durumu
Active
Vce Saturation Max Ib Ic
3V @ 800mA, 8A
Power Dissipation
180W
RoHS Durumu
RoHS Compliant
Montaj
Through Hole
Collector Base Voltage Vcbo
230V
Yükseklik
26mm
Collector Emitter Voltage Vceo
230V
Genişlik
5.2mm
Kılıf / Paket
TO-3PL
Polaritychannel Type
NPN
Çalışma Sıcaklığı
150°C TJ
Current Collector Cutoff Max
5μA ICBO
Yayın Yılı
2007
Fabrika Tedarik Süresi
14 Weeks
Dc Current Gain Hfe Min Ic Vce
80 @ 1A 5V
Max Collector Current
15A
Element Configuration
Single
Number Of Elements
1
Frekans
30MHz
Max Power Dissipation
180W
Kurşunsuz
Lead Free
Pin Sayısı
3
Gain Bandwidth Product
30MHz
Nem Hassasiyeti (MSL)
Not Applicable
Collectoremitter Saturation Voltage
3V
Emitter Base Voltage Vebo
5V
Hfemin
80
Collectoremitter Breakdown Voltage
230V
Uzunluk
20.5mm
ECCN Kodu
EAR99

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