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2SC2713-GR,LF

Toshiba Semiconductor and Storage

2SC2713-GR,LF

Single BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.22
  • 10+ pcs$0.20
  • 100+ pcs$0.19
  • 500+ pcs$0.18

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RoHS

Compliant

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Specifications

Yayın Yılı
2014
Power Max
150mW
Nem Hassasiyeti (MSL)
1 (Unlimited)
Frequency Transition
100MHz
Vce Saturation Max Ib Ic
300mV @ 1mA, 10mA
Current Collector Cutoff Max
100nA ICBO
Kılıf / Paket
TO-236-3, SC-59, SOT-23-3
RoHS Durumu
RoHS Compliant
Dc Current Gain Hfe Min Ic Vce
200 @ 2mA 6V
Parça Durumu
Active
Montaj
Surface Mount
Max Collector Current
100mA
Transistor Type
NPN
Collectoremitter Breakdown Voltage
120V
Max Breakdown Voltage
120V
Collector Base Voltage Vcbo
120V
Max Power Dissipation
150mW
Collector Emitter Voltage Vceo
300mV
Ambalaj
Cut Tape (CT)
Emitter Base Voltage Vebo
5V
Çalışma Sıcaklığı
125°C TJ
Montaj Tipi
Surface Mount
Fabrika Tedarik Süresi
12 Weeks

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