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2SA2056(TE85L,F)

Toshiba Semiconductor and Storage

2SA2056(TE85L,F)

Single BJT Transistors

RoHS: Compliant

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Specifications

Dc Current Gain Hfe Min Ic Vce
200 @ 300mA 2V
RoHS Durumu
RoHS Compliant
Çalışma Sıcaklığı
150°C TJ
Nem Hassasiyeti (MSL)
1 (Unlimited)
Montaj Tipi
Surface Mount
Transistor Type
PNP
Max Collector Current
2A
Ambalaj
Tape & Reel (TR)
Vce Saturation Max Ib Ic
200mV @ 33mA, 1A
Emitter Base Voltage Vebo
7V
Number Of Elements
1
Yayın Yılı
2011
Collector Emitter Voltage Vceo
50V
Radyasyon Dayanımı
No
Pin Sayısı
3
Kılıf / Paket
TO-236-3, SC-59, SOT-23-3
Montaj
Surface Mount
Fabrika Tedarik Süresi
12 Weeks
Power Dissipation
625mW
Max Power Dissipation
625mW
Current Collector Cutoff Max
100nA ICBO
Parça Durumu
Active
Collectoremitter Breakdown Voltage
50V
Collector Base Voltage Vcbo
50V

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