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2SA1962-O(Q)

Toshiba Semiconductor and Storage

2SA1962-O(Q)

Single BJT Transistors

In StockRoHS: Compliant

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Specifications

Collectoremitter Breakdown Voltage
230V
Temel Parça No
2SA1962
Kılıf / Paket
TO-3P-3, SC-65-3
Polaritychannel Type
PNP
Parça Durumu
Active
Fabrika Tedarik Süresi
16 Weeks
Power Dissipation
130W
Vce Saturation Max Ib Ic
3V @ 800mA, 8A
Ambalaj
Tube
Transition Frequency
30MHz
Collectoremitter Saturation Voltage
-1.5V
Yayın Yılı
2007
Number Of Elements
1
Frekans
30MHz
Transistor Application
AMPLIFIER
Emitter Base Voltage Vebo
5V
RoHS Durumu
RoHS Compliant
Element Configuration
Single
Nem Hassasiyeti (MSL)
Not Applicable
Gain Bandwidth Product
30MHz
Kurşunsuz
Lead Free
Collector Base Voltage Vcbo
230V
Montaj
Through Hole
Case Connection
COLLECTOR
Pin Sayısı
3
Radyasyon Dayanımı
No
Current Collector Cutoff Max
5μA ICBO
Max Power Dissipation
130W
Transistor Element Material
SILICON
Voltage Rated Dc
-230V
Max Collector Current
15A
Collector Emitter Voltage Vceo
230V
Terminal Sayısı
3
Akım Değeri
-15A
Dc Current Gain Hfe Min Ic Vce
80 @ 1A 5V
Transistor Type
PNP
Montaj Tipi
Through Hole
Hfemin
55
Çalışma Sıcaklığı
150°C TJ

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