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2SA1943-O(Q)

Toshiba Semiconductor and Storage

2SA1943-O(Q)

Single BJT Transistors

RoHS: Compliant

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Specifications

Collectoremitter Breakdown Voltage
230V
Temel Parça No
2SA1943
Parça Durumu
Active
Genişlik
5.2mm
Power Dissipation
150W
Fabrika Tedarik Süresi
12 Weeks
Uzunluk
20.5mm
Kılıf / Paket
TO-3PL
Number Of Elements
1
Yayın Yılı
2000
Frekans
30MHz
Yükseklik
26mm
Emitter Base Voltage Vebo
5V
Ambalaj
Tube
Vce Saturation Max Ib Ic
3V @ 800mA, 8A
Collectoremitter Saturation Voltage
-3V
Nem Hassasiyeti (MSL)
Not Applicable
RoHS Durumu
RoHS Compliant
Element Configuration
Single
Collector Base Voltage Vcbo
230V
Gain Bandwidth Product
30MHz
Kurşunsuz
Lead Free
Current Collector Cutoff Max
5μA ICBO
Max Power Dissipation
150W
Montaj
Through Hole
Contact Plating
Copper, Silver, Tin
Pin Sayısı
3
Radyasyon Dayanımı
No
Collector Emitter Voltage Vceo
230V
Max Collector Current
15A
Voltage Rated Dc
-230V
Transistor Type
PNP
Montaj Tipi
Through Hole
Hfemin
80
Çalışma Sıcaklığı
150°C TJ
Dc Current Gain Hfe Min Ic Vce
80 @ 1A 5V
Akım Değeri
-15A

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