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2SA1298-Y,LF

Toshiba Semiconductor and Storage

2SA1298-Y,LF

Single BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.07
  • 10+ pcs$0.06
  • 100+ pcs$0.06
  • 500+ pcs$0.06

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Same-day dispatch from stock

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RoHS

Compliant

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Specifications

Hfemin
40
Collectoremitter Saturation Voltage
-400mV
Collector Base Voltage Vcbo
-30V
Collector Emitter Voltage Vceo
400mV
Vce Saturation Max Ib Ic
400mV @ 20mA, 500mA
Dc Current Gain Hfe Min Ic Vce
160 @ 100mA 1V
Emitter Base Voltage Vebo
-5V
Fabrika Tedarik Süresi
12 Weeks
Continuous Collector Current
-800mA
Power Max
200mW
Kurşunsuz Kodu
yes
Gain Bandwidth Product
120MHz
Çalışma Sıcaklığı
150°C TJ
Montaj Tipi
Surface Mount
Max Collector Current
800mA
Max Breakdown Voltage
25V
Transistor Type
PNP
Kılıf / Paket
TO-236-3, SC-59, SOT-23-3
Yayın Yılı
2014
RoHS Durumu
RoHS Compliant
Parça Durumu
Active
Montaj
Surface Mount
Ambalaj
Tape & Reel (TR)
Max Power Dissipation
200mW
Nem Hassasiyeti (MSL)
1 (Unlimited)
Current Collector Cutoff Max
100nA ICBO
Collectoremitter Breakdown Voltage
25V

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