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Toshiba

RN2116MFV(TL3,T)

Pre-Biased BJT Transistors

RoHS: Compliant

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Specifications

Fabrika Paket Adedi
8000
Min. Çalışma Sıcaklığı
-55 °C
Pin Sayısı
3
Maks. Çalışma Sıcaklığı
150 °C
Radyasyon Dayanımı
No
Ambalaj
Cut Tape
Element Configuration
Single
Montaj
Surface Mount
RoHS
Details
Collector Emitter Voltage Vceo
50 V
Seri
RN2116

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