2SK1930

Specifications

Risk Rank

5.89

Drain Currentmax Id

4 A

Pulsed Drain Currentmax Idm

12 A

Case Connection

DRAIN

Package Body Material

PLASTIC/EPOXY

Terminal Pozisyonu

SINGLE

Number Of Elements

1

Yüzey Montaj

NO

Operating Temperaturemax

150 °C

Drain Currentmax Abs Id

4 A

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Number Of Terminals

3

Ds Breakdown Voltagemin

1000 V

Transistor Element Material

SILICON

Qualification Status

Not Qualified

JESD-609 Kodu

e0

Üretici Parça No

2SK1930

Package Shape

RECTANGULAR

Operating Mode

ENHANCEMENT MODE

Configuration

SINGLE WITH BUILT-IN DIODE

Polaritychannel Type

N-CHANNEL

Transistor Application

SWITCHING

Power Dissipationmax Abs

80 W

Package Description

IN-LINE, R-PSIP-T3

Terminal Kaplaması

TIN LEAD

REACH Uyumluluk Kodu

unknown

Jesd30 Code

R-PSIP-T3

Part Life Cycle Code

Obsolete

Drainsource On Resistancemax

3.8 Ω

Ihs Manufacturer

TOSHIBA CORP

Package Style

IN-LINE

Rohs Code

No

Terminal Formu

THROUGH-HOLE

Pin Sayısı

3