CSD25304W1015

Specifications

Rds On Max Id Vgs

32.5m Ω @ 1.5A, 4.5V

Current Continuous Drain Id25

3A Ta

Input Capacitance Ciss Max Vds

595pF @ 10V

Seri

NexFET™

Thickness

2mm

Vgs Max

±8V

Tepe Reflow Sıcaklığı (°C)

260

Gate To Source Voltage Vgs

8V

Montaj

Surface Mount

Terminal Pozisyonu

BOTTOM

Number Of Elements

1

Parça Durumu

Active

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Continuous Drain Current Id

3A

Ambalaj

Tape & Reel (TR)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Turn On Delay Time

6 ns

Lifecycle Status

ACTIVE (Last Updated: 5 days ago)

Uzunluk

1.5mm

Ds Breakdown Voltagemin

20V

Drainsource On Resistancemax

0.092Ohm

Turn Off Delay Time

24 ns

Transistor Element Material

SILICON

Fabrika Tedarik Süresi

16 Weeks

Kılıf / Paket

6-UFBGA, DSBGA

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Rise Time

4ns

Gate Charge Qg Max Vgs

4.4nC @ 4.5V

Fall Time Typ

10 ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Drive Voltage Max Rds On Min Rds On

1.8V 4.5V

Yükseklik

1mm

Power Dissipation Max

750mW Ta

Kurşunsuz

Lead Free

Montaj Tipi

Surface Mount

Temel Parça No

CSD25304

Genişlik

1.8mm

Kurşunsuz Kodu

yes

Nem Hassasiyeti (MSL)

1 (Unlimited)