CSD25303W1015

Specifications

Power Dissipation

1.5W

Ambalaj

Tape & Reel (TR)

Pin Sayısı

6

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

3A

Kurşunsuz Kodu

no

Element Configuration

Single

Drain To Source Voltage Vdss

20V

Terminal Sayısı

6

Pin Sayısı

6

Vgsth Max Id

1V @ 250μA

Turn On Delay Time

3.9 ns

Radyasyon Dayanımı

No

Turn Off Delay Time

11.3 ns

Drain Currentmax Abs Id

3A

Drainsource On Resistancemax

0.092Ohm

ECCN Kodu

EAR99

Gate Charge Qg Max Vgs

4.3nC @ 4.5V

Rise Time

8.6ns

Kılıf / Paket

6-UFBGA, DSBGA

Fet Type

P-Channel

Terminal Formu

BALL

Transistor Element Material

SILICON

Seri

NexFET™

Drive Voltage Max Rds On Min Rds On

1.8V 4.5V

Input Capacitance Ciss Max Vds

435pF @ 10V

Çalışma Sıcaklığı

-55°C~150°C TJ

Current Continuous Drain Id25

3A Tc

Rds On Max Id Vgs

58m Ω @ 1.5A, 4.5V

Fall Time Typ

7.8 ns

Montaj

Surface Mount

Gate To Source Voltage Vgs

8V

Vgs Max

±8V

Temel Parça No

CSD25303

Montaj Tipi

Surface Mount

Kurşunsuz

Contains Lead

Power Dissipation Max

1.5W Ta

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE