CSD23280F3T

Specifications

Transistor Element Material

SILICON

Fet Type

P-Channel

Fabrika Tedarik Süresi

6 Weeks

Kılıf / Paket

3-SMD, No Lead

Gate Charge Qg Max Vgs

1.23nC @ 4.5V

Drainsource On Resistancemax

0.25Ohm

Feedback Capmax Crss

11.1 pF

Pin Sayısı

3

Vgsth Max Id

0.95V @ 250μA

Terminal Sayısı

3

Uzunluk

690μm

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

Element Configuration

Single

Threshold Voltage

-650mV

Ds Breakdown Voltagemin

12V

Drain To Source Voltage Vdss

12V

Kurşunsuz Kodu

yes

Genişlik

600μm

Transistor Application

SWITCHING

Continuous Drain Current Id

1.8A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Case Connection

DRAIN

Pulsed Drain Currentmax Idm

11.4A

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Terminal Pozisyonu

BOTTOM

Parça Durumu

Active

Reach Svhc

No SVHC

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Montaj Tipi

Surface Mount

Kurşunsuz

Lead Free

Power Dissipation Max

500mW Ta

Temel Parça No

CSD23280

Vgs Max

-6V

Montaj

Surface Mount

Current Continuous Drain Id25

1.8A Ta

Rds On Max Id Vgs

116m Ω @ 400mA, 4.5V

Input Capacitance Ciss Max Vds

234pF @ 6V

Çalışma Sıcaklığı

-55°C~150°C TJ