CSD19538Q3AT

Specifications

Kılıf / Paket

8-PowerVDFN

Gate Charge Qg Max Vgs

4.3nC @ 10V

Terminal Kaplaması

Matte Tin (Sn)

Transistor Element Material

SILICON

Fabrika Tedarik Süresi

6 Weeks

Drainsource On Resistancemax

0.072Ohm

Uzunluk

3.3mm

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)

Ds Breakdown Voltagemin

100V

Case Connection

DRAIN

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Ambalaj

Tape & Reel (TR)

Continuous Drain Current Id

15A

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Number Of Elements

1

Terminal Pozisyonu

DUAL

Parça Durumu

Active

Reach Svhc

No SVHC

Montaj

Surface Mount

Vgs Max

±20V

Tepe Reflow Sıcaklığı (°C)

260

Thickness

800μm

Seri

NexFET™

Current Continuous Drain Id25

15A Ta

Rds On Max Id Vgs

59m Ω @ 5A, 10V

Input Capacitance Ciss Max Vds

454pF @ 50V

Terminal Formu

FLAT

Fet Type

N-Channel

Additional Feature

AVALANCHE RATED

Drain Currentmax Abs Id

4.9A

Feedback Capmax Crss

16.4 pF

Terminal Sayısı

5

Element Configuration

Single

Threshold Voltage

3.2V

Drain To Source Voltage Vdss

100V

Pin Sayısı

8

Vgsth Max Id

3.8V @ 250μA

JESD-609 Kodu

e3

Pulsed Drain Currentmax Idm

37A