CSD19538Q2T

Specifications

Additional Feature

AVALANCHE RATED

Drainsource On Resistancemax

0.072Ohm

Gate Charge Qg Max Vgs

5.6nC @ 10V

Terminal Kaplaması

Matte Tin (Sn)

Kılıf / Paket

6-WDFN Exposed Pad

Fabrika Tedarik Süresi

6 Weeks

Fet Type

N-Channel

Terminal Formu

NO LEAD

Transistor Element Material

SILICON

Pulsed Drain Currentmax Idm

34.4A

Ambalaj

Tape & Reel (TR)

Case Connection

DRAIN

JESD-609 Kodu

e3

Transistor Application

SWITCHING

Continuous Drain Current Id

13.1A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kurşunsuz Kodu

yes

Genişlik

2mm

Ds Breakdown Voltagemin

100V

Threshold Voltage

3.2V

Element Configuration

Single

Drain To Source Voltage Vdss

100V

Terminal Sayısı

6

Uzunluk

2mm

Lifecycle Status

ACTIVE (Last Updated: 4 days ago)

Pin Sayısı

6

Vgsth Max Id

3.8V @ 250μA

Avalanche Energy Rating Eas

8 mJ

Temel Parça No

CSD19538

Kurşunsuz

Lead Free

Montaj Tipi

Surface Mount

Power Dissipation Max

2.5W Ta 20.2W Tc

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Parça Durumu

Active

Reach Svhc

No SVHC

Number Of Elements

1

Terminal Pozisyonu

DUAL

Thickness

750μm

Seri

NexFET™