CSD19537Q3T

Specifications

Avalanche Energy Rating Eas

55 mJ

Contact Plating

Copper, Tin

Parça Durumu

Active

Reach Svhc

No SVHC

Number Of Elements

1

Terminal Pozisyonu

DUAL

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Input Capacitance Ciss Max Vds

1680pF @ 50V

Current Continuous Drain Id25

50A Ta

Rds On Max Id Vgs

14.5m Ω @ 10A, 10V

Thickness

1mm

Seri

NexFET™

Vgs Max

±20V

Montaj

Surface Mount

Gate To Source Voltage Vgs

20V

Turn Off Delay Time

10 ns

Direnç

12.1mOhm

Fabrika Tedarik Süresi

6 Weeks

Transistor Element Material

SILICON

Gate Charge Qg Max Vgs

21nC @ 10V

Terminal Kaplaması

Matte Tin (Sn)

Rise Time

3ns

Kılıf / Paket

8-PowerVDFN

Continuous Drain Current Id

50A

Ambalaj

Tape & Reel (TR)

Case Connection

DRAIN

Turn On Delay Time

5 ns

REACH Uyumluluk Kodu

not_compliant

Ds Breakdown Voltagemin

100V

Uzunluk

3.3mm

Lifecycle Status

ACTIVE (Last Updated: 5 days ago)

Montaj Tipi

Surface Mount

Kurşunsuz

Contains Lead

Power Dissipation Max

2.8W Ta 83W Tc

Temel Parça No

CSD19537

Çalışma Sıcaklığı

-55°C~150°C TJ

Fall Time Typ

3 ns

Drive Voltage Max Rds On Min Rds On

6V 10V

Configuration

SINGLE WITH BUILT-IN DIODE