CSD19537Q3

Specifications

Power Dissipation

2.8W

JESD-609 Kodu

e3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Genişlik

3.3mm

Kurşunsuz Kodu

yes

Threshold Voltage

3V

Terminal Sayısı

5

Pin Sayısı

8

Vgsth Max Id

3.6V @ 250μA

Additional Feature

AVALANCHE RATED

Configuration

SINGLE WITH BUILT-IN DIODE

ECCN Kodu

EAR99

Fet Type

N-Channel

Max Junction Temperature Tj

150°C

Terminal Formu

NO LEAD

Drive Voltage Max Rds On Min Rds On

6V 10V

Çalışma Sıcaklığı

-55°C~150°C TJ

Fall Time Typ

3 ns

Yükseklik

1.1mm

Temel Parça No

CSD19537

Power Dissipation Max

2.8W Ta 83W Tc

Kurşunsuz

Contains Lead

Montaj Tipi

Surface Mount

Number Of Channels

1

Ambalaj

Tape & Reel (TR)

Case Connection

DRAIN

Continuous Drain Current Id

9.7A

Lifecycle Status

ACTIVE (Last Updated: 5 days ago)

Uzunluk

3.3mm

REACH Uyumluluk Kodu

not_compliant

Turn On Delay Time

5 ns

Turn Off Delay Time

10 ns

Terminal Kaplaması

Matte Tin (Sn)

Rise Time

3ns

Gate Charge Qg Max Vgs

21nC @ 10V

Kılıf / Paket

8-PowerVDFN

Fabrika Tedarik Süresi

6 Weeks

Transistor Element Material

SILICON

Seri

NexFET™