CSD19536KTTT

Specifications

Fabrika Tedarik Süresi

6 Weeks

Transistor Element Material

SILICON

Rise Time

8ns

Gate Charge Qg Max Vgs

153nC @ 10V

Kılıf / Paket

TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

Turn Off Delay Time

32 ns

Drainsource On Resistancemax

0.0028Ohm

REACH Uyumluluk Kodu

not_compliant

Turn On Delay Time

13 ns

Ds Breakdown Voltagemin

100V

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

Uzunluk

10.18mm

Continuous Drain Current Id

200A

Ambalaj

Tape & Reel (TR)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Case Connection

DRAIN

Parça Durumu

Active

Number Of Elements

1

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Avalanche Energy Rating Eas

806 mJ

Contact Plating

Tin

Tepe Reflow Sıcaklığı (°C)

260

Vgs Max

±20V

Gate To Source Voltage Vgs

20V

Montaj

Surface Mount

Input Capacitance Ciss Max Vds

12000pF @ 50V

Rds On Max Id Vgs

2.4m Ω @ 100A, 10V

Current Continuous Drain Id25

200A Ta

Seri

NexFET™

Thickness

4.44mm

Fet Type

N-Channel

Terminal Formu

GULL WING

Feedback Capmax Crss

61 pF

Additional Feature

AVALANCHE RATED

Vgsth Max Id

3.2V @ 250μA

Pin Sayısı

3

Drain To Source Voltage Vdss

100V

Element Configuration

Single

Terminal Sayısı

2