CSD19536KTT

Specifications

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

Uzunluk

10.18mm

Turn On Delay Time

13 ns

REACH Uyumluluk Kodu

not_compliant

Ambalaj

Tape & Reel (TR)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Case Connection

DRAIN

Continuous Drain Current Id

200A

Rise Time

8ns

Gate Charge Qg Max Vgs

153nC @ 10V

Kılıf / Paket

TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

Fabrika Tedarik Süresi

6 Weeks

Transistor Element Material

SILICON

Turn Off Delay Time

32 ns

Drainsource On Resistancemax

0.0028Ohm

Gate To Source Voltage Vgs

20V

Montaj

Surface Mount

Tepe Reflow Sıcaklığı (°C)

260

Vgs Max

±20V

Seri

NexFET™

Thickness

4.44mm

Input Capacitance Ciss Max Vds

12000pF @ 50V

Rds On Max Id Vgs

2.4m Ω @ 100A, 10V

Current Continuous Drain Id25

200A Ta

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Drain To Source Breakdown Voltage

100V

Parça Durumu

Active

Number Of Elements

1

Avalanche Energy Rating Eas

806 mJ

Contact Plating

Tin

Element Configuration

Single

Terminal Sayısı

2

Pin Sayısı

3

Vgsth Max Id

3.2V @ 250μA

Power Dissipation

375W

Pulsed Drain Currentmax Idm

400A

JESD-609 Kodu

e3

Nem Hassasiyeti (MSL)

2 (1 Year)

Transistor Application

SWITCHING